Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach

Autor:	Singh, Ajay Kumar
Zdroj:	COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 2019, Vol. 38, Issue 2, pp. 815-828.
Databáze:	Emerald Insight
Externí odkaz:	http://www.emeraldinsight.com/doi/10.1108/COMPEL-08-2018-0327 Zobrazit plný text záznamu