Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications
Autor: | Thakur, Anchal a, Pedapudi, Michael Cholines b, ⁎, Shrivastva, Nishant c, Mani, Prashant d, Wadhwa, Girish e, f, g |
---|---|
Zdroj: | In Micro and Nanostructures March 2025 199 |
Databáze: | ScienceDirect |
Externí odkaz: |