Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications

Autor: Thakur, Anchal a, Pedapudi, Michael Cholines b, ⁎, Shrivastva, Nishant c, Mani, Prashant d, Wadhwa, Girish e, f, g
Zdroj: In Micro and Nanostructures March 2025 199
Databáze: ScienceDirect