Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density

Autor: Douara, Abdelmalek, Rabehi, Abdelaziz, Guermoui, Mawloud, Daha, Rania, Tibermacine, Imad Eddine
Zdroj: In Micro and Nanostructures November 2024 195
Databáze: ScienceDirect