The role of process and geometrical parameters of gate stack Inverted-T shape junction less FET at 20 nm technology node
| Autor: | Munjal, Sameeksha, Rup Prakash, Neelam, Kaur, Jasbir, Komal |
|---|---|
| Zdroj: | In Micro and Nanostructures September 2024 193 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect