Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs
| Autor: | Guo, Yuchen, Ren, Yuke, Peng, Zhihao, Ma, Xiaochen, Li, Shuti, Zheng, Shuwen |
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| Zdroj: | In Micro and Nanostructures July 2024 191 |
| Databáze: | ScienceDirect |
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