GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review
| Autor: | Reddy, Nelaturi Nagendra, Raut, Pratikhya, Panda, Deepak Kumar |
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| Zdroj: | In Micro and Nanostructures July 2024 191 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect