High-performance Schottky-barrier field-effect transistors based on two-dimensional GaN with Ag or Au contacts
| Autor: | Xie, Hai-Qing, Liu, Jing-Shuo, Cui, Kai-Yue, Wang, Xin-Yue, Fan, Zhi-Qiang |
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| Zdroj: | In Micro and Nanostructures July 2024 191 |
| Databáze: | ScienceDirect |
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