Modeling of novel RF AlGaN/GaN HEMTs with the structure of n-Si drain extension
| Autor: | Jiang, Yi-Zhou, Mo, Wei-Ye, Wang, Wei, Ma, Hong-Ping, Yu, Guo-Dong, Ge, Qin, Zhang, Kai, Huang, Wei, Xiao, Zhi-Qiang |
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| Zdroj: | In Micro and Nanostructures February 2023 174 |
| Databáze: | ScienceDirect |
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