Modeling of novel RF AlGaN/GaN HEMTs with the structure of n-Si drain extension
Autor: | Jiang, Yi-Zhou, Mo, Wei-Ye, Wang, Wei, Ma, Hong-Ping, Yu, Guo-Dong, Ge, Qin, Zhang, Kai, Huang, Wei, Xiao, Zhi-Qiang |
---|---|
Zdroj: | In Micro and Nanostructures February 2023 174 |
Databáze: | ScienceDirect |
Externí odkaz: |