1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation
| Autor: | Duan, Yu, Wang, Jingshan, Xie, Andy, Zhu, Zhongtao, Fay, Patrick |
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| Zdroj: | In e-Prime - Advances in Electrical Engineering, Electronics and Energy December 2023 6 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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