Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT
| Autor: | Fernandes Paes Pinto Rocha, P., Vauche, L., Mohamad, B., Vandendaele, W., Martinez, E., Veillerot, M., Spelta, T., Rochat, N., Gwoziecki, R., Salem, B., Sousa, V. |
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| Zdroj: | In Power Electronic Devices and Components March 2023 4 |
| Databáze: | ScienceDirect |
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