Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance
| Autor: | Zhang, L., Dai, T., Gammon, P.M., Shah, V.A., Mawby, P.A., Antoniou, M. |
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| Zdroj: | In Power Electronic Devices and Components March 2023 4 |
| Databáze: | ScienceDirect |
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