Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach
| Autor: | Song, Sungjoo, Kim, Jong-Hyun, Park, Jongyoun, Kim, Seung-Hwan, Ko, Dongjin, Choi, Hyejung, Kim, Seiyon, Yu, Hyun-Yong |
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| Zdroj: | In Applied Surface Science Advances January 2025 25 |
| Databáze: | ScienceDirect |
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