Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide
| Autor: | Han, Jimin, Jeong, Boyoung, Kim, Yuri, Suh, Joonki, Jeong, Hongsik, Kim, Hyun-Mi, Yoon, Tae-Sik |
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| Zdroj: | In Materials Today Advances August 2022 15 |
| Databáze: | ScienceDirect |
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