Dielectric properties of epitaxially grown lattice-mismatched GaAs/p-Si heterojunction diode

Autor: Ashery, A., Gaballah, A.E.H., Elnasharty, Mohamed M.M., Basyooni-M. Kabatas, Mohamed A.
Zdroj: In iScience 20 September 2024 27(9)
Databáze: ScienceDirect