Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors

Autor: Kang, Ha Young, Yeom, Min Jae, Yang, Jeong Yong, Choi, Yoonho, Lee, Jaeyong, Park, Changkun, Yoo, Geonwook, Kyu Chung, Roy Byung
Zdroj: In Materials Today Physics February 2023 31
Databáze: ScienceDirect