Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode
| Autor: | Prasad, Chowdam Venkata, Park, Joon Hui, Min, Ji Young, Song, Wonjin, Labed, Madani, Jung, Yusup, Kyoung, Sinsu, Kim, Sangmo, Sengouga, Nouredine, Rim, You Seung |
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| Zdroj: | In Materials Today Physics January 2023 30 |
| Databáze: | ScienceDirect |
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