Trap engineering in bismuth activated NaLu(Gd)GeO4 persistent phosphors by doping Ln3+
| Autor: | Hou, Xiaochun, Wan, Teng, Gao, Dangli, Zhang, Xiangyu, Jia, Chaoyang, Du, Chengxue, Chai, Ruipeng, Pang, Qing, Yun, Sining, Wang, Yuhua |
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| Zdroj: | In Materials Today Chemistry July 2024 39 |
| Databáze: | ScienceDirect |
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