Improved electrical contact property of Si-doped GaN thin films deposited by PEALD with various growth cycle ratio of SiNx and GaN
| Autor: | Zhang, Zhi-Xuan, Jiang, Shi-Cong, Wu, Wan-Yu, Gao, Peng, Jiang, Linqin, Qiu, Yu, Wuu, Dong-Sing, Lai, Feng-Min, Lien, Shui-Yang, Zhu, Wen-Zhang |
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| Zdroj: | In Surfaces and Interfaces October 2023 41 |
| Databáze: | ScienceDirect |
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