Low temperature silicon nitride grown by very high frequency (VHF, 162MHz) plasma enhanced atomic layer deposition with floating multi-tile electrode
Autor: | Ji, You Jin, Kim, Hae In, Kim, Ki Hyun, Kang, Ji Eun, Kim, Doo San, Kim, Ki Seok, Ellingboe, A.R., Kim, Dong Woo, Yeom, Geun Young |
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Zdroj: | In Surfaces and Interfaces October 2022 33 |
Databáze: | ScienceDirect |
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