Low temperature silicon nitride grown by very high frequency (VHF, 162MHz) plasma enhanced atomic layer deposition with floating multi-tile electrode

Autor: Ji, You Jin, Kim, Hae In, Kim, Ki Hyun, Kang, Ji Eun, Kim, Doo San, Kim, Ki Seok, Ellingboe, A.R., Kim, Dong Woo, Yeom, Geun Young
Zdroj: In Surfaces and Interfaces October 2022 33
Databáze: ScienceDirect