Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3

Autor: Onik, Tahsin Ahmed Mozaffor, Hawari, Huzein Fahmi, Sabri, Mohd Faizul Mohd, Wong, Yew Hoong
Zdroj: In Surfaces and Interfaces August 2021 25
Databáze: ScienceDirect