Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures

Autor: Timofeev, Vyacheslav A., Nikiforov, Alexandr I., Tuktamyshev, Artur R., Bloshkin, Aleksey A., Mashanov, Vladimir I., Teys, Sergey A., Loshkarev, Ivan D., Baidakova, Natalia A.
Zdroj: In Modern Electronic Materials June 2017 3(2):86-90
Databáze: ScienceDirect