Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers
| Autor: | Ju, Changfan, Zeng, Binjian, Luo, Ziqi, Yang, Zhibin, Hao, Puqi, Liao, Luocheng, Yang, Qijun, Peng, Qiangxiang, Zheng, Shuaizhi, Zhou, Yichun, Liao, Min |
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| Zdroj: | In Journal of Materiomics March 2024 10(2):277-284 |
| Databáze: | ScienceDirect |
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