High-k and high-temperature-resistant polysilsesquioxane: Potential for solution-processed metal oxide semiconductor transistors operating at low voltage

Autor:	Choe, Geonoh, Kim, Jiyeong, Shin, Su Cheol, Jeong, Yu Rim, Kim, Se Jin, Choi, Bo Sung, Nam, Sooji, Paoprasert, Peerasak, Thongsai, Nichaphat, Park, Eunji, Kang, Byungin, Murali, G., Kim, Sung-Jin, In, Insik, An, Tae Kyu, Jeong, Yong Jin
Zdroj:	In Materials Today Communications March 2023 34
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect