Characterization of III-V dilute nitride based multi-quantum well p-i-n diodes for next generation opto-electrical conversion devices

Autor: Anuar Mohamad, Khairul, Syahmi Nordin, Mohammad, Nayan, Nafarizal, Alias, Afishah, Rahman Mohmad, Abdul, Boland-Thoms, Adrian, John Vickers, Anthony
Zdroj: In Materials Today: Proceedings 2019 7 Part 2:625-631
Databáze: ScienceDirect