Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
| Autor: | He, Mu, Dong, Peng, Ma, Yao, Yu, Qingkui, Cao, Shuang, Huang, Wende, Xu, Qian, Zhang, Sijie, Huang, Mingmin, Li, Yun, Yang, Zhimei, Gong, Min |
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| Zdroj: | In Results in Physics May 2024 60 |
| Databáze: | ScienceDirect |
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