The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes

Autor: Xu, Chaozhi, Cai, Lie, Zheng, Jinjian, Lin, Haoxiang, Chen, Zhichao, Niu, Kai, Cheng, Zaijun, Xiong, Feibing
Zdroj: In Results in Physics December 2023 55
Databáze: ScienceDirect