Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application
| Autor: | Rahmani, Mehr Khalid, Ismail, Muhammad, Mahata, Chandreswar, Kim, Sungjun |
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| Zdroj: | In Results in Physics September 2020 18 |
| Databáze: | ScienceDirect |
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