Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
| Autor: | Ismail, Muhammad, Batool, Zahida, Mahmood, Khalid, Manzoor Rana, Anwar, Yang, Byung-Do, Kim, Sungjun |
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| Zdroj: | In Results in Physics September 2020 18 |
| Databáze: | ScienceDirect |
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