DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application
Autor: | GASSOUMI, Moujahed, HELALI, Abdelhamid, MAAREF, Hassen, GASSOUMI, Malek |
---|---|
Zdroj: | In Results in Physics March 2019 12:302-306 |
Databáze: | ScienceDirect |
Externí odkaz: |