DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

Autor: GASSOUMI, Moujahed, HELALI, Abdelhamid, MAAREF, Hassen, GASSOUMI, Malek
Zdroj: In Results in Physics March 2019 12:302-306
Databáze: ScienceDirect