Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Autor: Sun, Linfeng, Hwang, Genuwoo, Choi, Wooseon, Han, Gyeongtak, Zhang, Yishu, Jiang, Jinbao, Zheng, Shoujun, Watanabe, Kenji, Taniguchi, Takashi, Zhao, Mali, Zhao, Rong, Kim, Young-Min, Yang, Heejun
Zdroj: In Nano Energy March 2020 69
Databáze: ScienceDirect