Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET
| Autor: | Dong, Chao, Gao, Sai, Liu, Yulin, Wang, Gengji, Yin, Jinliang, Du, Mingxing |
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| Zdroj: | In Microelectronics Journal December 2024 154 |
| Databáze: | ScienceDirect |
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