AlGaN/GaN HEMT Based Hydrogen Sensors With Gate Absorption Layers Formed by High Temperature Oxidation
| Autor: | Rýger, I., Vanko, G., Kunzo, P., Lalinský, T., Vallo, M., Plecenik, A., Satrapinský, L., Plecenik, T. |
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| Zdroj: | In Procedia Engineering 2012 47:518-521 |
| Databáze: | ScienceDirect |
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