Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
Autor: | Jantawongrit, P., Sanorpim, S., Yaguchi, H., Orihara, M., Limsuwan, P. |
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Zdroj: | In Procedia Engineering 2012 32:882-887 |
Databáze: | ScienceDirect |
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