Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

Autor: Jantawongrit, P., Sanorpim, S., Yaguchi, H., Orihara, M., Limsuwan, P.
Zdroj: In Procedia Engineering 2012 32:882-887
Databáze: ScienceDirect