Single Crystal Growth and Transport Properties of Cu-doped Topological Insulator Bi2Se3

Autor: Li, Z.J., Liu, Y., White, S.C., Wahl, P., Xie, X.M., Jiang, M.H., Lin, C.T.
Zdroj: In Physics Procedia 2012 36:638-643
Databáze: ScienceDirect