Ballistic transport in 5.1 nm monolayer boron phosphide transistors for high-performance applications

Autor: Wang, Yu, Chen, Wen, Jing, Sicheng, Pan, Jinghua, Wang, Danni, Ma, Zelong, Bian, Baoan
Zdroj: In Current Applied Physics August 2023 52:85-93
Databáze: ScienceDirect