Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres

Autor: Du, Ling, Li, Jiacheng, Zhang, Yu, Qin, Ni, Bao, Dinghua
Zdroj: In Current Applied Physics April 2023 48:123-133
Databáze: ScienceDirect