Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
| Autor: | Latrach, S., Frayssinet, E., Defrance, N., Chenot, S., Cordier, Y., Gaquière, C., Maaref, H. |
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| Zdroj: | In Current Applied Physics December 2017 17(12):1601-1608 |
| Databáze: | ScienceDirect |
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