Effect of annealing treatment on the uniformity of CeO2/TiO2 bilayer resistive switching memory devices
| Autor: | Ismail, M., Rana, A.M., Nisa, S.-U., Hussain, F., Imran, M., Mahmood, K., Talib, I., Ahmed, E., Bao, D.H. |
|---|---|
| Zdroj: | In Current Applied Physics October 2017 17(10):1303-1309 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect