High mobility field effect transistor of SnOx on glass using HfOx gate oxide
| Autor: | Ju, Chanjong, Park, Chulkwon, Yang, Hyeonseok, Kim, Useong, Kim, Young Mo, Char, Kookrin |
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| Zdroj: | In Current Applied Physics March 2016 16(3):300-304 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect