InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V
| Autor: | Kim, Kyung Rok, Yoon, Young Jun, Cho, Seongjae, Seo, Jae Hwa, Lee, Jung-Hee, Bae, Jin-Hyuk, Cho, Eou-Sik, Kang, In Man |
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| Zdroj: | In Current Applied Physics November 2013 13(9):2051-2054 |
| Databáze: | ScienceDirect |
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