Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
| Autor: | Mosbahi, H., Gassoumi, M., Saidi, Imen, Mejri, Houcine, Gaquière, C., Zaidi, M.A., Maaref, H. |
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| Zdroj: | In Current Applied Physics September 2013 13(7):1359-1364 |
| Databáze: | ScienceDirect |
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