A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement
| Autor: | Rahimian, Morteza, Orouji, Ali A., Aminbeidokhti, Amirhossein |
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| Zdroj: | In Current Applied Physics June 2013 13(4):779-784 |
| Databáze: | ScienceDirect |
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