Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Autor: Yoo, Geunho, Park, Hyunsung, Lee, Donghun, Lim, Hyoungjin, Lee, Seunga, Kong, Bohyun, Cho, Hyungkoun, Park, Hyoungwon, Lee, Heon, Nam, Okhyun
Zdroj: In Current Applied Physics 2011 11(4) Supplement:S90-S94
Databáze: ScienceDirect