Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
Autor: | Yoo, Geunho, Park, Hyunsung, Lee, Donghun, Lim, Hyoungjin, Lee, Seunga, Kong, Bohyun, Cho, Hyungkoun, Park, Hyoungwon, Lee, Heon, Nam, Okhyun |
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Zdroj: | In Current Applied Physics 2011 11(4) Supplement:S90-S94 |
Databáze: | ScienceDirect |
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