Electroluminescence enhancement of [formula omitted] semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

Autor: Bae, S.Y., Lee, D.S., Kong, B.H., Cho, H.K., Kaeding, J.F., Nakamura, S., DenBaars, S.P., Speck, J.S.
Zdroj: In Current Applied Physics 2011 11(3):954-958
Databáze: ScienceDirect