ECR plasma etching of GaAs in CCl 2F 2/Ar/O 2 discharge and IR studies of the etched surface

Autor:	Singh, L.S.S., Tiwary, K.P., Purohit, R.K., Zaidi, Z.H., Husain, M.
Zdroj:	In Current Applied Physics 2005 5(4):351-355
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect