Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator
Autor: | Kwak, Sol-Mi, Kim, Hyeong-Rae, Jang, Hye-Won, Yang, Ji-Hee, Mamoru, Furuta, Yoon, Sung-Min |
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Zdroj: | In Organic Electronics August 2019 71:7-13 |
Databáze: | ScienceDirect |
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