Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

Autor: Kwak, Sol-Mi, Kim, Hyeong-Rae, Jang, Hye-Won, Yang, Ji-Hee, Mamoru, Furuta, Yoon, Sung-Min
Zdroj: In Organic Electronics August 2019 71:7-13
Databáze: ScienceDirect