Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics
| Autor: | Mao, D., Mejia, I., Salas-Villasenor, A.L., Singh, M., Stiegler, H., Gnade, B.E., Quevedo-Lopez, M.A. |
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| Zdroj: | In Organic Electronics February 2013 14(2):505-510 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect