High-performance pentacene field-effect transistors using Al 2O 3 gate dielectrics prepared by atomic layer deposition (ALD)
| Autor: | Zhang, Xiao-Hong, Domercq, Benoit, Wang, Xudong, Yoo, Seunghyup, Kondo, Takeshi, Wang, Zhong Lin, Kippelen, Bernard |
|---|---|
| Zdroj: | In Organic Electronics 2007 8(6):718-726 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect