Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method
| Autor: | Yoshida, Shiniti, Watanabe, Yasumasa, Kita, Yuuki, Shimura, Takayoshi, Watanabe, Heiji, Yasutake, Kiyoshi, Akasaka, Yasushi, Nara, Yasuo, Yamada, Keisaku |
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| Zdroj: | In Science and Technology of Advanced Materials 2007 8(3):219-224 |
| Databáze: | ScienceDirect |
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