A FinFET-based low-power, stable 8T SRAM cell with high yield

Autor: Mani, Elangovan, Nimmagadda, Padmaja, Basha, Shaik Javid, El-Meligy, Mohammed A., Mahmoud, Haitham A.
Zdroj: In AEUE - International Journal of Electronics and Communications February 2024 175
Databáze: ScienceDirect